Zenode.ai Logo
TK31V60X,LQ

TK31V60X,LQ

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.098 Ω@10V, DFN 8 X 8, DTMOSⅣ-H

Find alt
TK31V60X,LQ

TK31V60X,LQ

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.098 Ω@10V, DFN 8 X 8, DTMOSⅣ-H

Find alt

Description

General part information

TK31V60X Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.098 Ω@10V, DFN 8 x 8, DTMOSⅣ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK31V60X,LQ
Current - Continuous Drain (Id) (Ta)30.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)65 nC, 65 nC
Input Capacitance (Ciss) (Max)3000 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case4-VSFN Exposed Pad
Package Length8 mm
Package Name4-DFN-EP
Package Width8 mm
Power Dissipation (Max)240 W
Rds On (Max)98 mOhm, 98 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK31V60X,LQ | Datasheet
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Avalanche energy calculation
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Simplified CFD Model Application Note
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET SPICE model grade
Structures and Characteristics: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Resonant Circuits and Soft Switching
MOSFET Secondary Breakdown
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
TK31V60X Data sheet/Japanese
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
RC Snubbers for Step-Down Converters
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET Self-Turn-On Phenomenon
Hints and Tips for Thermal Design part3
Motor Control (Vacuum Cleaners)
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Maximum Ratings: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2