AO4404B

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 8.5A 8SOIC

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AO4404B

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 8.5A 8SOIC

Deep-Dive with AI

DocumentsAOS Green Policy

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.58
	Digi-Reel®	1	$ 0.58
	Tape & Reel (TR)	3000	$ 0.20
		6000	$ 0.19
		9000	$ 0.17
		30000	$ 0.17

Description

General part information

AO44 Series

N-Channel 30 V 8.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC

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Technical documentation and resources

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	AO4404B	AO44 Series

Current - Continuous Drain (Id) @ 25°C	8.5 A	4 - 18 A
Drain to Source Voltage (Vdss)	30 V	12 - 100 V
Drive Voltage (Max Rds On, Min Rds On)	-	1.8 - 20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V	10 V
FET Type	N-Channel	P-Channel, N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	11.3 - 57 nC
Gate Charge (Qg) (Max) @ Vgs	-	20 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC	11 - 63 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF	350 - 4750 pF
Input Capacitance (Ciss) (Max) @ Vds	-	1120 - 3033 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	8-SOIC	8-SOIC
Package / Case [x]	0.154 in	0.154 in
Package / Case [y]	3.9 mm	3.9 mm
Power Dissipation (Max)	3.1 W	1.7 - 3.7 W
Power Dissipation (Max)	-	3 W
Rds On (Max) @ Id, Vgs	24 mOhm	6.5 - 130 mOhm
Rds On (Max) @ Id, Vgs	-	6.2 - 34 mOhm
Supplier Device Package	8-SOIC	8-SOIC, 8-SO
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	12 V	8 - 25 V
Vgs(th) (Max) @ Id	1.5 V	1 - 4 V

AO44 Series

MOSFET P-CH 60V 6.2A 8SOIC

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
Alpha & Omega Semiconductor Inc. AO4421	MOSFET (Metal Oxide)	2900 pF	-55 °C	150 °C	4.5 V, 10 V	8-SOIC	60 V	8-SOIC	3.9 mm	0.154 in	3 V	P-Channel	Surface Mount	3.1 W	20 V	40 mOhm	55 nC	6.2 A
Alpha & Omega Semiconductor Inc. AO4403L	MOSFET (Metal Oxide)	1128 pF	-55 °C	150 °C		8-SOIC	30 V	8-SOIC	3.9 mm	0.154 in	1.3 V	P-Channel	Surface Mount	3.1 W	12 V	46 mOhm	11.3 nC	6 A	10 V	2.5 V
Alpha & Omega Semiconductor Inc. AO4423L	MOSFET (Metal Oxide)		-55 °C	150 °C	6 V, 20 V	8-SOIC	30 V	8-SOIC	3.9 mm	0.154 in	2.6 V	P-Channel	Surface Mount	3.1 W	25 V		57 nC	17 A			6.2 mOhm	3033 pF
Alpha & Omega Semiconductor Inc. AO4482L	MOSFET (Metal Oxide)	2000 pF	-55 °C	150 °C	4.5 V, 10 V	8-SOIC	100 V	8-SOIC	3.9 mm	0.154 in	2.7 V	N-Channel	Surface Mount	3.1 W	20 V	37 mOhm		6 A					44 nC
Alpha & Omega Semiconductor Inc. AO4441L	MOSFET (Metal Oxide)		-55 °C	150 °C	4.5 V, 10 V	8-SOIC	60 V	8-SOIC	3.9 mm	0.154 in	3 V	P-Channel	Surface Mount	3.1 W	20 V	100 mOhm		4 A				1120 pF		20 nC
Alpha & Omega Semiconductor Inc. AO4449	MOSFET (Metal Oxide)	910 pF	-55 °C	150 °C	4.5 V, 10 V	8-SOIC	30 V	8-SOIC	3.9 mm	0.154 in	2.4 V	P-Channel	Surface Mount	3.1 W	20 V			7 A			34 mOhm		16 nC
Alpha & Omega Semiconductor Inc. AO4423	MOSFET (Metal Oxide)		-55 °C	150 °C	6 V, 20 V	8-SOIC	30 V	8-SOIC	3.9 mm	0.154 in	2.6 V	P-Channel	Surface Mount	3.1 W	25 V		57 nC	17 A			6.2 mOhm	3033 pF
Alpha & Omega Semiconductor Inc. AO4474	MOSFET (Metal Oxide)		-55 °C	150 °C	4.5 V, 10 V	8-SOIC	30 V	8-SOIC	3.9 mm	0.154 in	2.5 V	N-Channel	Surface Mount	3.7 W	12 V			13.4 A			11.5 mOhm	1452 pF	28 nC
Alpha & Omega Semiconductor Inc. AO4421L	MOSFET (Metal Oxide)	2900 pF	-55 °C	150 °C	4.5 V, 10 V	8-SOIC	60 V	8-SOIC	3.9 mm	0.154 in	3 V	P-Channel	Surface Mount	3.1 W	20 V	40 mOhm	55 nC	6.2 A
Alpha & Omega Semiconductor Inc. AO4448	MOSFET (Metal Oxide)	2005 pF	-55 °C	150 °C		8-SOIC	80 V	8-SOIC	3.9 mm	0.154 in		N-Channel	Surface Mount	3.1 W	25 V		34 nC	10 A			16 mOhm