MOSFET N-CH 30V 8.5A 8SOIC
| Part | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 1100 pF  | Surface Mount  | 12 nC  | N-Channel  | 12 V  | 8-SOIC  | 8.5 A  | 1.5 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 24 mOhm  | -55 °C  | 150 °C  | 30 V  | 10 V  | 2.5 V  | ||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 2900 pF  | Surface Mount  | P-Channel  | 20 V  | 8-SOIC  | 6.2 A  | 3 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 40 mOhm  | -55 °C  | 150 °C  | 60 V  | 55 nC  | 4.5 V  10 V  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | Surface Mount  | 24 nC  | P-Channel  | 25 V  | 8-SOIC  | 10.5 A  | 3 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | -55 °C  | 150 °C  | 30 V  | 5 V  20 V  | 1400 pF  | 14 mOhm  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 1900 pF  | Surface Mount  | N-Channel  | 20 V  | 8-SOIC  | 18 A  | 2.5 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 6.5 mOhm  | -55 °C  | 150 °C  | 30 V  | 36 nC  | 4.5 V  10 V  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 560 pF  | Surface Mount  | 11 nC  | N-Channel  | 25 V  | 8-SOIC  | 9 A  | 2 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 19 mOhm  | -55 °C  | 150 °C  | 30 V  | 4.5 V  10 V  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 910 pF  | Surface Mount  | 16 nC  | P-Channel  | 20 V  | 8-SOIC  | 7 A  | 2.4 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | -55 °C  | 150 °C  | 30 V  | 4.5 V  10 V  | 34 mOhm  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | Surface Mount  | 16 nC  | P-Channel  | 20 V  | 8-SOIC  | 6.5 A  | 2.5 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 46 mOhm  | -55 °C  | 150 °C  | 30 V  | 4.5 V  10 V  | ||||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 910 pF  | Surface Mount  | 16 nC  | P-Channel  | 20 V  | 8-SOIC  | 7 A  | 2.4 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | -55 °C  | 150 °C  | 30 V  | 4.5 V  10 V  | 34 mOhm  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | 910 pF  | Surface Mount  | N-Channel  | 20 V  | 8-SOIC  | 13 A  | 2.5 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | 11.5 mOhm  | -55 °C  | 150 °C  | 30 V  | 17 nC  | 4.5 V  10 V  | |||||
Alpha & Omega Semiconductor Inc.  | 3.1 W  | MOSFET (Metal Oxide)  | Surface Mount  | P-Channel  | 25 V  | 8-SOIC  | 17 A  | 2.6 V  | 8-SOIC  | 3.9 mm  | 0.154 in  | -55 °C  | 150 °C  | 30 V  | 57 nC  | 6 V  20 V  | 3033 pF  | 6.2 mOhm  |