TK650A60F,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, Π-MOSⅨ
TK650A60F,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, Π-MOSⅨ
Description
General part information
TK650A60F Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.65 Ω@10V, TO-220SIS, π-MOSⅨ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK650A60F,S4X |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 34 nC |
| Input Capacitance (Ciss) (Max) | 1320 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 650 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET SPICE model grade
Structures and Characteristics: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Electrical Characteristics: Power MOSFET Application Notes
TK650A60F Data sheet/Japanese
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
TK650A60F Data sheet/English
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Selection Guide MOSFETs 2025 Rev1.0
Maximum Ratings: Power MOSFET Application Notes
Simplified CFD Model Application Note
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET Secondary Breakdown
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
MOSFET Self-Turn-On Phenomenon
Calculating the Temperature of Discrete Semiconductor Devices
Avalanche energy calculation
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1