
PMCXB290UEZ
ActiveNexperia USA Inc.
20 V, COMPLEMENTARY N/P-CHANNEL TRENCH MOSFET

PMCXB290UEZ
ActiveNexperia USA Inc.
20 V, COMPLEMENTARY N/P-CHANNEL TRENCH MOSFET
Description
General part information
PMCXB290UE Series
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCXB290UEZ |
|---|---|
| Configuration | P-Channel Complementary, N |
| Current - Continuous Drain (Id) (Ta) | 930 mA |
| Current - Continuous Drain (Id) (Ta) (2) | 570 mA |
| Current - Continuous Drain (Id) (Tc) | 3.5 A |
| Current - Continuous Drain (Id) (Tc) (2) | 2.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Max) | 0.9 nC |
| Input Capacitance (Ciss) (Max) | 53.5 pF, 43.6 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-XFDFN Exposed Pad |
| Package Name | DFN1010B-6 |
| Power - Max (Ta) | 280 mW |
| Power - Max (Tc) | 6 W |
| Rds On (Max) | 770 mOhm, 320 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
DFN1010B-6; Reel pack for SMD, 7''; Q2/T3 product orientation
Low temperature soldering, application study
Nexperia package poster
Thermal performance of DFN packages
plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body
Questions about package outline drawings
Reflow soldering profile
plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.35 mm pitch; 1.1 mm x 1 mm x 0.37 mm body