MCP14E10-E/P
ActiveMOSFET DRIVER, LOW SIDE, 4.5V-18V SUPPLY, 3A AND 2.8 OHM OUTPUT, DIP-8
MCP14E10-E/P
ActiveMOSFET DRIVER, LOW SIDE, 4.5V-18V SUPPLY, 3A AND 2.8 OHM OUTPUT, DIP-8
Description
General part information
MCP14E10 Series
The MCP14E9/E10/E11 devices are a family of 3 A, dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E9/E10/E11 can charge 1,800 pF gate capacitance in under 25 ns (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.
Technical Specifications
Parameters and characteristics for this part
| Specification | MCP14E10-E/P |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 3 A |
| Current - Peak Output (Source) | 3 A |
| Driven Configuration | Low-Side |
| Fall Time (Typ) | 25 ns |
| Gate Channel | N-Channel, P-Channel |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET, MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.4 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.3 in |
| Package Name | 8-PDIP, 8-DIP |
| Package Width | 7.62 mm |
| Rise Time (Typ) | 25 ns |
| Voltage - Supply (Maximum) | 18 V |
| Voltage - Supply (Minimum) | 4.5 V |
Pricing
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