Specification	SIR164ADP-T1-GE3

Current - Continuous Drain (Id) (Ta)	35.9 A
Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	77 nC
Input Capacitance (Ciss) (Max)	3595 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	62.5 W, 5 W
Rds On (Max)	2.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SIR164 Series

Part	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	Package Name	Gate Charge (Max)	Package / Case	FET Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SIR164DP-T1-GE3	2.5 mOhm	-55 °C	150 °C	20 V	30 V	50 A	2.5 V	Surface Mount	PowerPAK® SO-8	123 nC	PowerPAK® SO-8	N-Channel	5.2 W 69 W	10 V	4.5 V	MOSFET (Metal Oxide)
Vishay Dale SIR164DP-T1-RE3	2.5 mOhm	-55 °C	150 °C	20 V	30 V	50 A	2.5 V	Surface Mount	PowerPAK® SO-8	123 nC	PowerPAK® SO-8	N-Channel	69 W	10 V	4.5 V	MOSFET (Metal Oxide)
Vishay Dale SIR164ADP-T1-GE3	2.2 mOhm	-55 °C	150 °C		30 V	40 A	2.2 V	Surface Mount	PowerPAK® SO-8	77 nC	PowerPAK® SO-8	N-Channel	5 W 62.5 W	10 V	4.5 V	MOSFET (Metal Oxide)	-16 V	20 V	3595 pF	35.9 A

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