TK12A80W,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ
TK12A80W,S4X
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ
Description
General part information
TK12A80W Series
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK12A80W,S4X |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 450 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Power MOSFET Structure and Characteristics
Power MOSFET Maximum Ratings
MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
Power MOSFET Thermal Design and Attachment of a Thermal Fin
MOSFET Avalanche Ruggedness
Selection Guide 2024 - MOSFETs
Power MOSFET Electrical Characteristics
Parasitic Oscillation and Ringing of Power MOSFETs
Impacts of the dv/dt Rate on MOSFETs
MOSFET Gate Driver Circuit
Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
TK12A80W Data sheet/Japanese
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Resonant Circuits and Soft Switching
Calculating the Temperature of Discrete Semiconductor Devices
Derating of the MOSFET Safe Operating Area
RC Snubbers for Step-Down Converters
MOSFET Self-Turn-On Phenomenon
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
TK12A80W Data sheet/English
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
Avalanche energy calculation
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET Secondary Breakdown
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Simplified CFD Model Application Note
Hints and Tips for Thermal Design part3