CSD16401Q5T
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM
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CSD16401Q5T
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD16401Q5T | CSD16401Q5 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A | 38 - 100 A |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4100 pF | 4100 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| Power Dissipation (Max) | 3.1 W | 3.1 W |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm | 1.6 mOhm |
| Supplier Device Package | 8-VSON-CLIP (5x6) | 8-VSON-CLIP (5x6) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 16 V | 16 V |
| Vgs (Max) [Min] | -12 V | -12 V |
| Vgs(th) (Max) @ Id | 1.9 V | 1.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.92 | |
| 10 | $ 2.45 | |||
| 100 | $ 1.99 | |||
| Digi-Reel® | 1 | $ 2.92 | ||
| 10 | $ 2.45 | |||
| 100 | $ 1.99 | |||
| Tape & Reel (TR) | 250 | $ 1.87 | ||
| 500 | $ 1.76 | |||
| 1250 | $ 1.51 | |||
| 2500 | $ 1.42 | |||
| 6250 | $ 1.36 | |||
| Texas Instruments | SMALL T&R | 1 | $ 2.21 | |
| 100 | $ 1.93 | |||
| 250 | $ 1.35 | |||
| 1000 | $ 1.09 | |||
CSD16401Q5 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) [Max] | Vgs (Max) [Min] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16401Q5 | 29 nC | 8-PowerTDFN | 1.6 mOhm | 1.9 V | N-Channel | 16 V | -12 V | 4.5 V, 10 V | 38 A, 100 A | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3.1 W | Surface Mount | 8-VSON-CLIP (5x6) | 4100 pF | 25 V |
Texas Instruments CSD16401Q5T | 29 nC | 8-PowerTDFN | 1.6 mOhm | 1.9 V | N-Channel | 16 V | -12 V | 4.5 V, 10 V | 100 A | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3.1 W | Surface Mount | 8-VSON-CLIP (5x6) | 4100 pF | 25 V |
Description
General part information
CSD16401Q5 Series
This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources