AOW10N65

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 10A TO262

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 10A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW10N65

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1645 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Alpha & Omega Semiconductor Inc. AOW10N65	1 Ohm	650 V	30 V	10 V	250 W	Through Hole	1645 pF	TO-262	10 A	MOSFET (Metal Oxide)	4.5 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$