BSC026N08NS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

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BSC026N08NS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

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Description Specifications Series Pricing CAD Documents

Description

General part information

BSC026 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Technical Specifications

Parameters and characteristics for this part

Specification	BSC026N08NS5ATMA1

Current - Continuous Drain (Id) (Ta)	23 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	92 nC
Input Capacitance (Ciss) (Max)	6800 pF, 6800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8-6
Power Dissipation (Max)	156 W, 2.5 W
Rds On (Max)	2.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.8 V

BSC026 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Rds On (Max)	FET Type
INFINEON BSC026N02KSGAUMA1	-55 °C	150 °C	PG-TDSON-8-1	2.8 W 78 W	100 A	25 A	2.5 V	4.5 V	Surface Mount	8-PowerTDFN	1.2 V	20 V	MOSFET (Metal Oxide)	12 V	7800 pF	52.7 nC	2.6 mOhm	N-Channel
INFINEON BSC026NE2LS5ATMA1	-55 °C	150 °C	PG-TDSON-8-7	2.5 W 29 W		24 A	4.5 V	10 V	Surface Mount	8-PowerTDFN	2 V	25 V	MOSFET (Metal Oxide)	16 V	1100 pF	16 nC	2.6 mOhm	N-Channel
INFINEON BSC026N08NS5ATMA1	-55 °C	150 °C	PG-TDSON-8-6	2.5 W 156 W	100 A	23 A	6 V	10 V	Surface Mount	8-PowerTDFN	3.8 V	80 V	MOSFET (Metal Oxide)	20 V	6800 pF 6800 pF	92 nC	2.6 mOhm	N-Channel

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

BSC026N08NS5ATMA1 | Datasheet