ZVNL120A

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVNL120A

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 5 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	10 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel Enhancement Mode Vertical DMOS FET

Part	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max) [Max]
Diodes Inc ZVNL120A	N-Channel	700 mW	200 V	TO-226-3 TO-92-3	3 V 5 V	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	10 Ohm	180 mA	TO-92	1.5 V	20 V
Diodes Inc ZVNL120GTA	N-Channel		200 V	TO-261-4 TO-261AA	3 V 5 V	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	10 Ohm	320 mA	SOT-223-3	1.5 V	20 V	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources