PMV27UPEAR

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Nexperia USA Inc.

TRANS MOSFET P-CH 20V 5.6A 3-PIN TO-236AB T/R

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PMV27UPEAR

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 5.6A 3-PIN TO-236AB T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV27UPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV27UPEAR

Current - Continuous Drain (Id) (Ta)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	22.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1820 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	490 mW, 4.15 W
Qualification	AEC-Q101
Rds On (Max)	32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMV27UPEA Series

20 V, P-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Grade	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) (Ta)	Qualification	Gate Charge (Max)	Package Name	Technology
Nexperia USA Inc. PMV27UPEAR	20 V	8 V	Automotive	4.15 W 490 mW	4.5 V	1.8 V	Surface Mount	1820 pF	-55 °C	150 °C	32 mOhm	950 mV	SC-59 SOT-23-3 TO-236-3	P-Channel	4.5 A	AEC-Q101	22.1 nC	TO-236AB	MOSFET (Metal Oxide)