SI5905 Series

Part	Current - Continuous Drain (Id)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Channel Count	Configuration	Configuration - Features	Technology	FET Feature	Mounting Type	Gate Charge (Max)	Power - Max	Package Name	Rds On (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SI5905DC-T1-GE3	3 A	-55 °C	150 °C	450 mV	2	P-Channel	Dual	MOSFET (Metal Oxide)	Logic Level Gate	Surface Mount	9 nC	1.1 W	1206-8 ChipFET™	90 mOhm	8-SMD Flat Leads	8 V
Vishay Dale SI5905BDC-T1-E3	4 A	-55 °C	150 °C	1 V	2	P-Channel	Dual	MOSFET (Metal Oxide)	Logic Level Gate	Surface Mount	11 nC	3.1 W	1206-8 ChipFET™	80 mOhm	8-SMD Flat Leads	8 V	350 pF
Vishay Dale SI5905DC-T1-E3	3 A	-55 °C	150 °C	450 mV	2	P-Channel	Dual	MOSFET (Metal Oxide)	Logic Level Gate	Surface Mount	9 nC	1.1 W	1206-8 ChipFET™	90 mOhm	8-SMD Flat Leads	8 V
Vishay Dale SI5905BDC-T1-GE3	4 A	-55 °C	150 °C	1 V	2	P-Channel	Dual	MOSFET (Metal Oxide)	Logic Level Gate	Surface Mount	11 nC	3.1 W	1206-8 ChipFET™	80 mOhm	8-SMD Flat Leads	8 V	350 pF

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