PMDPB58UPE,115

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Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.6A 6-PIN HUSON EP T/R

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PMDPB58UPE,115

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.6A 6-PIN HUSON EP T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMDPB58UPE Series

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB58UPE,115

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	3.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	9.5 nC
Input Capacitance (Ciss) (Max)	804 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFDFN Exposed Pad
Package Length	2 mm
Package Name	6-HUSON
Package Width	2 mm
Power - Max	515 mW
Rds On (Max)	67 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	950 mV

PMDPB58UPE Series

20 V dual P-channel Trench MOSFET

Part	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Package / Case	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Rds On (Max)	Power - Max	Package Length	Package Name	Package Width	Current - Continuous Drain (Id)
Nexperia USA Inc. PMDPB58UPE,115	Surface Mount	20 V	MOSFET (Metal Oxide)	9.5 nC	804 pF	2	P-Channel	Dual	6-UFDFN Exposed Pad	Logic Level Gate	-55 °C	150 °C	950 mV	67 mOhm	515 mW	2 mm	6-HUSON	2 mm	3.6 A