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Description

General part information

HMC8205 Series

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.APPLICATIONSMilitary jammersCommercial and military radarPower amplifier stage for wireless infrastructureTest and measurement equipment

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC8205BF10
Current - Supply1.3 A
Frequency (Max)6 GHz
Frequency (Min)300 MHz
Gain28 dB
Mounting TypeSurface Mount
Package / Case10-CLCC
Package Name10-CLCC
Test Frequency3 GHz
Voltage - Supply50 V

Pricing

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CAD

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