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IPT60R028G7XTMA1

IPT60R028G7XTMA1

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INFINEON

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 28 MOHM; HIGHEST PERFORMANCE

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IPT60R028G7XTMA1

IPT60R028G7XTMA1

Active
INFINEON

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 28 MOHM; HIGHEST PERFORMANCE

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Description

General part information

IPT60R028 Series

600V CoolMOS™ G7 power transistor. The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™ technology, 4 pin Kelvin source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3KW. Suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT60R028G7XTMA1
Current - Continuous Drain (Id) (Tc)75 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)123 nC
Input Capacitance (Ciss) (Max)4820 pF, 4820 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NamePG-HSOF-8-2
Power Dissipation (Max)391 W
Rds On (Max)28 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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