Specification	IRFI640GPBF

Current - Continuous Drain (Id) (Tc)	9.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	TO-220-3
Power Dissipation (Max)	40 W
Rds On (Max)	180 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFI640 Series

Part	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Rds On (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package Name	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package / Case
Vishay Dale IRFI640GPBF	200 V	N-Channel	40 W	70 nC	4 V	180 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Through Hole	10 V	9.8 A	TO-220-3	20 V	1300 pF	Isolated Tab TO-220-3 Full Pack
Vishay Dale IRFI640G	200 V	N-Channel	40 W	70 nC	4 V	180 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Through Hole	10 V	9.8 A	TO-220-3	20 V	1300 pF	Isolated Tab TO-220-3 Full Pack

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