D1961SH45TXPSA1

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Infineon Technologies

DIODE GEN PURP 4.5KV 2380A

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Infineon Technologies

DIODE GEN PURP 4.5KV 2380A

Technical Specifications

Parameters and characteristics for this part

Specification	D1961SH45TXPSA1

Current - Average Rectified (Io)	2380 A
Current - Reverse Leakage @ Vr	150 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	140 °C
Operating Temperature - Junction [Min]	0 °C
Package / Case	DO-200AE
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4500 V
Voltage - Forward (Vf) (Max) @ If	2.5 V

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Current - Reverse Leakage @ Vr	Package / Case	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies D1961SH45TXPSA1	Chassis Mount	2.5 V	2380 A	0 °C	140 °C	Standard	150 mA	DO-200AE	Standard Recovery >500ns	200 mA	4500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	2	$ 1833.71

General part information

Diode 4500 V 2380A Chassis Mount

Technical documentation and resources