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TPN1600ANH,L1Q

TPN1600ANH,L1Q

Active
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR TSON-ADV MOQ=3000 PD=42W F=1MHZ ROHS COMPLIANT: YES

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TPN1600ANH,L1Q

TPN1600ANH,L1Q

Active
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR TSON-ADV MOQ=3000 PD=42W F=1MHZ ROHS COMPLIANT: YES

Find alt

Description

General part information

TPN1600ANH Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 0.016 Ω@10V, TSON Advance, U-MOSⅧ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTPN1600ANH,L1Q
Current - Continuous Drain (Id) (Tc)17 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)19 nC
Input Capacitance (Ciss) (Max)1600 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Package Length3.1 mm
Package Name8-TSON Advance
Package Width3.1 mm
Power Dissipation (Max)700 mW, 42 W
Rds On (Max)16 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TPN1600ANH,L1Q | Datasheet
Hints and Tips for Thermal Design part3
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Derating of the MOSFET Safe Operating Area
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Avalanche energy calculation
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Selection Guide MOSFETs 2025 Rev1.0
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
TPN1600ANH Data sheet/Japanese
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
Calculating the Temperature of Discrete Semiconductor Devices
Structures and Characteristics: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Simplified CFD Model Application Note
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
MOSFET Secondary Breakdown
Resonant Circuits and Soft Switching
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET SPICE model grade
Hints and Tips for Thermal Design for Discrete Semiconductor Devices