G200P04S2

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MOSFET 2P-CH 40V 9A 8SOP

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MOSFET 2P-CH 40V 9A 8SOP

Description

General part information

Mosfet Array 40V 9A (Tc) 2.1W (Tc) Surface Mount 8-SOP

Parameters and characteristics for this part

Specification	G200P04S2

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	2365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	2.1 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Channel Count	Configuration	Configuration - Features	Technology	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Power - Max (Tc)	Rds On (Max)
Goford Semiconductor G200P04S2	42 nC	9 A	2	P-Channel	Dual	MOSFET (Metal Oxide)	0.154 in	8-SOIC 8-SOP	3.9 mm	-55 °C	150 °C	2365 pF	Surface Mount	40 V	2.5 V	2.1 W	20 mOhm

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Technical documentation and resources