Specification	IPB60R600C6ATMA1

Current - Continuous Drain (Id) (Tc)	7.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20.5 nC
Input Capacitance (Ciss) (Max)	440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	63 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPB60R Series

Part	Technology	FET Type	Vgs(th) (Max)	Package Name	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package / Case
INFINEON IPB60R385CPATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3-2	385 mOhm	10 V	Surface Mount	790 pF	-55 °C	150 °C	600 V	22 nC	20 V	9 A	83 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R190P6ATMA1	MOSFET (Metal Oxide)	N-Channel	4.5 V	PG-TO263-3	190 mOhm	10 V	Surface Mount	1750 pF	-55 °C	150 °C	600 V	37 nC 37 nC	20 V	20.2 A 20.2 A	151 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R600C6ATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3	600 mOhm	10 V	Surface Mount	440 pF	-55 °C	150 °C	600 V	20.5 nC	20 V	7.3 A	63 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R600P6ATMA1	MOSFET (Metal Oxide)	N-Channel	4.5 V	PG-TO263-3	600 mOhm	10 V	Surface Mount	557 pF	-55 °C	150 °C	600 V	12 nC	20 V	7.3 A	63 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R600CPATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3	600 mOhm	10 V	Surface Mount	550 pF	-55 °C	150 °C	600 V	27 nC	20 V	6.1 A	60 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R230P6ATMA1	MOSFET (Metal Oxide)	N-Channel	4.5 V	PG-TO263-3-1	230 mOhm	10 V	Surface Mount	1450 pF	-55 °C	150 °C	600 V	31 nC	20 V	16.8 A	126 W	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA
INFINEON IPB60R299CPATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3-2	299 mOhm	10 V	Surface Mount	1100 pF	-55 °C	150 °C	600 V	29 nC	20 V	11 A	96 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R330P6ATMA1	MOSFET (Metal Oxide)	N-Channel	4.5 V	PG-TO263-3	330 mOhm	10 V	Surface Mount	1010 pF	-55 °C	150 °C	600 V	22 nC	20 V	12 A	93 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R250CPATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3-2	250 mOhm	10 V	Surface Mount	1200 pF	-55 °C	150 °C	600 V	35 nC	20 V	12 A	104 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
INFINEON IPB60R520CPATMA1	MOSFET (Metal Oxide)	N-Channel	3.5 V	PG-TO263-3	520 mOhm	10 V	Surface Mount	630 pF	-55 °C	150 °C	600 V	31 nC	20 V	6.8 A	66 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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IPB60R600C6ATMA1 | Datasheet