NGB30T65M3DFPJ
Active650 V, 50 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
NGB30T65M3DFPJ
Active650 V, 50 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Description
General part information
NGB30T65M3DFP Series
The NGB30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NGB30T65M3DFPJ |
|---|---|
| Current - Collector (Ic) (Max) | 56 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power - Max | 199 W |
| Reverse Recovery Time (trr) | 115 ns |
| Switching Energy (Off) | 420 µJ |
| Switching Energy (On) | 780 µJ |
| Td (off) @ 25°C | 139 ns |
| Td (on) @ 25°C | 19 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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