Specification	SQJ488EP-T1_BE3

Current - Continuous Drain (Id) (Tc)	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	978 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQJ488 Series

Part	Technology	Grade	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max)	Mounting Type	Gate Charge (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Qualification	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package / Case
Vishay Dale SQJ488EP-T1_BE3	MOSFET (Metal Oxide)	Automotive	42 A	978 pF	N-Channel	20 V	Surface Mount	27 nC	21 mOhm	-55 °C	175 °C	100 V	2.5 V	PowerPAK® SO-8	AEC-Q101	10 V	4.5 V	83 W	PowerPAK® SO-8
Vishay Dale SQJ488EP-T2_BE3	MOSFET (Metal Oxide)	Automotive	42 A	978 pF	N-Channel	20 V	Surface Mount	27 nC	21 mOhm	-55 °C	175 °C	100 V	2.5 V	PowerPAK® SO-8	AEC-Q101	10 V	4.5 V	83 W	PowerPAK® SO-8

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