Specification	SQJQ142E-T1_GE3

Current - Continuous Drain (Id) (Tc)	460 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	130 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	6975 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 8 x 8
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	500 W
Qualification	AEC-Q101
Rds On (Max)	1.24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJQ142 Series

Part	Rds On (Max)	Gate Charge (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Grade	Package Width	Package Name	Package Length	Package / Case	Mounting Type	Technology	Power Dissipation (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Qualification	Drain to Source Voltage (Vdss)
Vishay Dale SQJQ142E-T1_GE3	1.24 mOhm	130 nC	N-Channel	460 A	Automotive	8 mm	PowerPAK®	8 mm	PowerPAK® 8 x 8	Surface Mount	MOSFET (Metal Oxide)	500 W	3.5 V	10 V	-55 °C	175 °C	20 V	6975 pF	AEC-Q101	40 V

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