Specification	SI7322ADN-T1-GE3

Current - Continuous Drain (Id) (Tc)	15.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	26 W
Rds On (Max)	57 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI7322 Series

Part	Input Capacitance (Ciss) (Max)	Technology	Rds On (Max)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Package Name
Vishay Dale SI7322ADN-T1-GE3	360 pF	MOSFET (Metal Oxide)	57 mOhm	26 W	20 V	PowerPAK® 1212-8	10 V	4 V	13 nC	100 V	15.1 A	-55 °C	150 °C	Surface Mount	N-Channel	PowerPAK® 1212-8
Vishay Dale SI7322DN-T1-GE3	750 pF	MOSFET (Metal Oxide)	58 mOhm	3.8 W 52 W	20 V	PowerPAK® 1212-8	10 V	4.4 V	20 nC	100 V	18 A	-55 °C	150 °C	Surface Mount	N-Channel	PowerPAK® 1212-8
Vishay Dale SI7322DN-T1-E3	750 pF	MOSFET (Metal Oxide)	58 mOhm	3.8 W 52 W	20 V	PowerPAK® 1212-8	10 V	4.4 V	20 nC	100 V		-55 °C	150 °C	Surface Mount	N-Channel	PowerPAK® 1212-8

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