ZXMHC10A07N8TC

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Diodes Inc

100V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Diodes Inc

100V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMHC10A07N8TC

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	800 mA, 680 mA
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.9 nC
Input Capacitance (Ciss) (Max) @ Vds	141 pF, 138 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	870 mW
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

100V SO8 Complementary enhancement mode MOSFET H-Bridge

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZXMHC10A07N8TC	100 V	700 mOhm	8-SO	4 V	2.9 nC	680 mA 800 mA	MOSFET (Metal Oxide)	Surface Mount	2 N and 2 P-Channel (Full Bridge)	138 pF 141 pF	870 mW	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C

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General part information

100V SO8 Complementary enhancement mode MOSFET H-Bridge

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