MJE802

Obsolete

STMicroelectronics

TRANS NPN DARL 80V 4A SOT-32

Search across all available documentation for this part.

Obsolete

STMicroelectronics

TRANS NPN DARL 80V 4A SOT-32

Technical Specifications

Parameters and characteristics for this part

Specification	MJE802

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Package / Case
STMicroelectronics MJE802	750	80 V	SOT-32	150 °C	4 A	3 V	100 nA	40 W	Through Hole	TO-126-3 TO-225AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole SOT-32

Technical documentation and resources