IXFH270N06T3

Obsolete

IXYS

MOSFET N-CH 60V 270A TO247

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Obsolete

IXYS

MOSFET N-CH 60V 270A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH270N06T3

Current - Continuous Drain (Id) @ 25°C	270 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	12600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)
IXYS IXFH270N06T3	4 V	200 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Through Hole	270 A	12600 pF	TO-247-3	3.1 mOhm	N-Channel	10 V	60 V	TO-247 (IXTH)	480 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 270A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available