2N5551,412

Active

NXP USA Inc.

TRANS NPN 160V 0.3A TO92-3

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Active

NXP USA Inc.

TRANS NPN 160V 0.3A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5551,412

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	630 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

TRANS NPN 160V 0.3A TO92-3

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Package / Case	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
NXP USA Inc. 2N5551,412	300 mA	630 mW	80	Through Hole	160 V	50 nA	TO-92-3	NPN	TO-226-3, TO-92-3	300 MHz	200 mV	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3

Technical documentation and resources