Specification	TK60S06K3L(T6L1,NQ

Current - Continuous Drain (Id) (Ta)	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2900 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPAK+
Power Dissipation (Max)	88 W
Rds On (Max)	8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

TK60S06 Series

Part	Package / Case	Operating Temperature	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max)	Technology	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Package Name	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)
Toshiba Semiconductor and Storage TK60S06K3L(T6L1,NQ	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	3 V	60 A	60 V	20 V	8 mOhm	MOSFET (Metal Oxide)	Surface Mount	6 V	10 V	88 W	DPAK+	N-Channel	2900 pF	60 nC

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