TN0104N8-G
ActivePOWER MOSFET, N CHANNEL, 40 V, 630 MA, 2 OHM, TO-243AA, SURFACE MOUNT
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TN0104N8-G
ActivePOWER MOSFET, N CHANNEL, 40 V, 630 MA, 2 OHM, TO-243AA, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN0104N8-G | TN0104 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 450 mA |
| Drain to Source Voltage (Vdss) | - | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 3 - 10 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 70 pF |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 1 W |
| Rds On (Max) @ Id, Vgs | - | 1.8 Ohm |
| Supplier Device Package | - | TO-92-3 |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | T/R | 1 | $ 1.43 | |
| 25 | $ 1.17 | |||
| 100 | $ 1.09 | |||
| 1000 | $ 0.90 | |||
| 5000 | $ 0.83 | |||
| 10000 | $ 0.77 | |||
TN0104 Series
40V, 1.8 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN0104N3-G-P014 | 1 W | 3 V, 10 V | 70 pF | 1.6 V | -55 °C | 150 °C | 20 V | N-Channel | Through Hole | 40 V | 1.8 Ohm | TO-226-3, TO-92-3 | TO-92-3 | MOSFET (Metal Oxide) | 450 mA |
Microchip Technology TN0104N3-G-P003 | 1 W | 3 V, 10 V | 70 pF | 1.6 V | -55 °C | 150 °C | 20 V | N-Channel | Through Hole | 40 V | 1.8 Ohm | TO-226-3, TO-92-3 | TO-92-3 | MOSFET (Metal Oxide) | 450 mA |
Microchip Technology TN0104N8-G | |||||||||||||||
Microchip Technology TN0104N3-G-P014 | |||||||||||||||
Microchip Technology TN0104N3-G-P003 |
Description
General part information
TN0104 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources