IR20153SPBF

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR20153SPBF

Channel Type	Single
Current - Peak Output (Source, Sink)	1.5 A, 1.5 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	150 V
Input Type	Inverting
Logic Voltage - VIL, VIH	3 V, 1.4 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	100 ns
Rise / Fall Time (Typ) [custom]	200 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

Part	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Channel Type	Supplier Device Package	Input Type	Gate Type	Mounting Type	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink)
Infineon Technologies IR20153SPBF	150 V	1.4 V 3 V	5 V	20 V	Single	8-SOIC	Inverting	N-Channel MOSFET	Surface Mount	1	-55 °C	150 °C	High-Side	8-SOIC	3.9 mm	0.154 in	100 ns	200 ns	1.5 A 1.5 A
Infineon Technologies IR20153STRPBF	150 V	1.4 V 3 V	5 V	20 V	Single	8-SOIC	Inverting	N-Channel MOSFET	Surface Mount	1	-55 °C	150 °C	High-Side	8-SOIC	3.9 mm	0.154 in	100 ns	200 ns	1.5 A 1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Inverting 8-SOIC

Technical documentation and resources

No documents available