HERAF807G C0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A ITO220AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	HERAF807G C0G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Supplier Device Package
Taiwan Semiconductor Corporation HERAF807G C0G	150 °C	-55 °C	1.7 V	8 A	Through Hole	200 mA 500 ns	10 µA	800 V	TO-220-2 Full Pack	60 pF	Standard	80 ns	ITO-220AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 8A Through Hole ITO-220AC

Technical documentation and resources