
MURT40010
ActiveGeneSiC Semiconductor
DIODE MODULE GP 100V 200A 3TOWER

MURT40010
ActiveGeneSiC Semiconductor
DIODE MODULE GP 100V 200A 3TOWER
Description
General part information
MURT400 Series
Diode Array 1 Pair Common Cathode 100 V 200A Chassis Mount Three Tower
Technical Specifications
Parameters and characteristics for this part
| Specification | MURT40010 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 A |
| Current - Reverse Leakage | 25 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Three Tower |
| Package Name | Three Tower |
| Reverse Recovery Time (trr) | 125 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 1.3 V |
Pricing
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CAD
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Documents
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