GHXS045A120S-D3

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DIODE MOD SIC 1200V 45A SOT-227

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SemiQ

DIODE MOD SIC 1200V 45A SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS045A120S-D3

Current - Average Rectified (Io) (per Diode)	45 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)
SemiQ GHXS045A120S-D3	SOT-227-4 miniBLOC	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	1.7 V	1.2 kV	300 µA	Chassis Mount	SOT-227	2 Independent	200 mA 500 ns	45 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 45A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

No documents available