BSP62E6327HTSA1

Obsolete

Infineon Technologies

TRANS PNP DARL 80V 1A SOT223-4

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Obsolete

Infineon Technologies

TRANS PNP DARL 80V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BSP62E6327HTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.5 W
Supplier Device Package	PG-SOT223-4
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Frequency - Transition	Operating Temperature	Transistor Type
Infineon Technologies BSP62E6327HTSA1	1 A	1.5 W	2000	10 µA	1.8 V	80 V	PG-SOT223-4	TO-261-4 TO-261AA	Surface Mount	200 MHz	150 °C	PNP - Darlington

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP - Darlington 80 V 1 A 200MHz 1.5 W Surface Mount PG-SOT223-4

Technical documentation and resources