Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC20065WY | STPSC20065 Series |
|---|---|---|
| Capacitance @ Vr, F | 1250 pF | 670 - 1250 pF |
| Current - Average Rectified (Io) | - | 10 A |
| Current - Reverse Leakage @ Vr | 300 µA | 130 - 300 µA |
| Grade | Automotive | Automotive |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | DO-247-2 (Straight Leads) | TO-220-2, DO-247-2 (Straight Leads), TO-247-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | DO-247 | TO-220AC, DO-247, TO-220AC ins, TO-247 Long Leads, D2PAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V | 1.45 V |
STPSC20065 Series
650 V power Schottky silicon carbide diode
| Part | Package / Case | Technology | Reverse Recovery Time (trr) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Qualification | Mounting Type | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Grade | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC20065DY | TO-220-2 | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | AEC-Q101 | Through Hole | TO-220AC | 150 µA | No Recovery Time | Automotive | 1.45 V | 650 V | 1250 pF | |
STMicroelectronics STPSC20065WY | DO-247-2 (Straight Leads) | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | AEC-Q101 | Through Hole | DO-247 | 300 µA | No Recovery Time | Automotive | 1.45 V | 650 V | 1250 pF | |
STMicroelectronics STPSC20065DI | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | Through Hole | TO-220AC ins | 300 µA | No Recovery Time | 1.45 V | 650 V | 1250 pF | ||||
STMicroelectronics STPSC20065CWL | TO-247-3 | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | Through Hole | TO-247 Long Leads | 130 µA | No Recovery Time | 1.45 V | 650 V | 670 pF | 10 A | ||
STMicroelectronics STPSC20065GY-TR | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | AEC-Q101 | Surface Mount | D2PAK | 150 µA | No Recovery Time | Automotive | 1.45 V | 650 V | 1250 pF | |
STMicroelectronics STPSC20065D | TO-220-2 | SiC (Silicon Carbide) Schottky | 0 ns | -40 °C | 175 ░C | Through Hole | TO-220AC | 300 µA | No Recovery Time | 1.45 V | 650 V | 1250 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC20065 Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Documents
Technical documentation and resources