Specification	PDTC124XK,115

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	80
Mounting Type	Surface Mount
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SMT3; MPAK
Power - Max	250 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	150 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

PDTC124 Series

Part	DC Current Gain (hFE) (Min)	Package Name	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max	Resistor - Base (R1) Resistance	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max)
NXP USA Inc. PDTC124XK,115	80	SMT3; MPAK	SC-59 SOT-23-3 TO-236-3	50 V	NPN Pre-Biased	250 mW	22 kOhm	0.1 mA	1 µA	47 kOhm	Surface Mount	150 mV
NXP USA Inc. PDTC124TE,115	100	SC-75	SC-75 SOT-416	50 V	NPN Pre-Biased	150 mW	22 kOhm	0.1 mA	1 µA		Surface Mount	150 mV
NXP USA Inc. PDTC124EK,115	60	SMT3; MPAK	SC-59 SOT-23-3 TO-236-3	50 V	NPN Pre-Biased	250 mW	22 kOhm	0.1 mA	1 µA	22 kOhms	Surface Mount	150 mV
NXP USA Inc. PDTC124EE,115	60	SC-75	SC-75 SOT-416	50 V	NPN Pre-Biased	150 mW	22 kOhm	0.1 mA	1 µA	22 kOhms	Surface Mount	150 mV
NXP USA Inc. PDTC124ES,126	60	TO-92-3	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	50 V	NPN Pre-Biased	0.5 W	22 kOhm	0.1 mA	1 µA	22 kOhms	Through Hole	150 mV
NXP USA Inc. PDTC124XS,126	80	TO-92-3	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	50 V	NPN Pre-Biased	0.5 W	22 kOhm	0.1 mA	1 µA	47 kOhm	Through Hole	150 mV

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