MT3S111(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 11.5GHZ SMINI

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Toshiba Semiconductor and Storage

RF TRANS NPN 6V 11.5GHZ SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S111(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	11.5 GHz
Gain	12 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.2 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	700 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6 V

Part	Frequency - Transition	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f)	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Gain	Mounting Type
Toshiba Semiconductor and Storage MT3S111(TE85L,F)	11.5 GHz	150 °C	700 mW	200	1.2 dB	NPN	SC-59 SOT-23-3 TO-236-3	100 mA	6 V	S-Mini	12 dBi	Surface Mount

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General part information

RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini

Technical documentation and resources