AOTF9N90

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 9A TO220-3F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 9A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF9N90

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOTF9N90	4.5 V	TO-220F	58 nC	900 V	-55 °C	150 °C	TO-220-3 Full Pack	30 V	1.3 Ohm	Through Hole	MOSFET (Metal Oxide)	9 A	50 W	N-Channel	2560 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.22