WNSC5D04650D6J

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WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A DPAK

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WeEn Semiconductors

DIODE SIL CARBIDE 650V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC5D04650D6J

Capacitance @ Vr, F	138 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SIL CARBIDE 650V 4A DPAK

Part	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology	Mounting Type	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
WeEn Semiconductors WNSC5D04650D6J	No Recovery Time	20 µA	DPAK	1.7 V	0 ns	SiC (Silicon Carbide) Schottky	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	138 pF	175 ░C	-55 C	650 V	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 4A Surface Mount DPAK

Technical documentation and resources

No documents available