DIODE SIL CARBIDE 650V 4A DPAK
| Part | Speed | Current - Reverse Leakage @ Vr | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Technology | Mounting Type | Package / Case | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WeEn Semiconductors WNSC5D04650D6J | No Recovery Time | 20 µA | DPAK | 1.7 V | 0 ns | SiC (Silicon Carbide) Schottky | Surface Mount | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 138 pF | 175 ░C | -55 C | 650 V | 4 A |