TSM6866SDCA RVG

Obsolete

Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 6A 8TSSOP

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Obsolete

Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 6A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM6866SDCA RVG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	565 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	1.6 W
Rds On (Max) @ Id, Vgs [Max]	30 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	600 mV

Part	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Rds On (Max) @ Id, Vgs [Max]
Taiwan Semiconductor Corporation TSM6866SDCA RVG	8-TSSOP	1.6 W	20 V	600 mV	5 nC	MOSFET (Metal Oxide)	565 pF	Surface Mount	2 N-Channel (Dual)	6 A	-55 °C	150 °C	8-TSSOP	0.173 "	4.4 mm	30 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 6A (Ta) 1.6W Surface Mount 8-TSSOP

Technical documentation and resources

No documents available