IPP05CN10NGHKSA1

Active

Infineon Technologies

MOSFET N-CH 100V 100A TO-220

Search across all available documentation for this part.

Active

Infineon Technologies

MOSFET N-CH 100V 100A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	IPP05CN10NGHKSA1

Current - Continuous Drain (Id) @ 25°C	100 A

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type
Infineon Technologies IPP05CN10NGHKSA1	100 A
Infineon Technologies IPP05CN10NGXKSA1	100 A	N-Channel	12000 pF	20 V	10 V	-55 °C	175 ░C	181 nC	MOSFET (Metal Oxide)	TO-220-3	4 V	5.4 mOhm	100 V	300 W	PG-TO220-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

100A (Tc)

Technical documentation and resources