Specification	2SA1943-O(S1,F

Current - Collector (Ic) (Max)	15 A
Current - Collector Cutoff (Max)	5 µA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Package Name	TO-3P(L)
Power - Max	150 W
Supplier Device Package	TO-3P, L
Transistor Type	PNP
Vce Saturation (Max)	3 V
Voltage - Collector Emitter Breakdown (Max)	230 V

2SA1943 Series

Bipolar Transistors, PNP Bipolar Transistor, -230 V, -15 A, TO-3P(L)

Part	Mounting Type	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max)	Transistor Type	Current - Collector Cutoff (Max)	Supplier Device Package	Package Name	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	DC Current Gain (hFE) (Min)	Power - Max	Package / Case
Toshiba Semiconductor and Storage 2SA1943-O(S1,F	Through Hole	150 °C	30 MHz	15 A	PNP	5 µA	L TO-3P	TO-3P(L)	230 V	3 V	80	150 W	TO-3PL
Toshiba Semiconductor and Storage 2SA1943-O(Q)	Through Hole	150 °C	30 MHz	15 A	PNP	5 µA	L TO-3P	TO-3P(L)	230 V	3 V	80	150 W	TO-3PL

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