IXFQ50N60X

Obsolete

IXYS

MOSFET N-CH 600V 50A TO3P

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Obsolete

IXYS

MOSFET N-CH 600V 50A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ50N60X

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	116 nC
Input Capacitance (Ciss) (Max) @ Vds	4660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	660 W
Rds On (Max) @ Id, Vgs	73 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
IXYS IXFQ50N60X	TO-3P	4660 pF	-55 °C	150 °C	50 A	660 W	Through Hole	30 V	4.5 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	10 V	600 V	116 nC	N-Channel	73 mOhm
IXYS IXFQ50N50P3	TO-3P	4335 pF	-55 °C	150 °C	50 A		Through Hole	30 V	5 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	10 V	500 V		N-Channel	120 mOhm	85 nC	960 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 50A (Tc) 660W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available