PSMN6R0-30YLB,115

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Nexperia USA Inc.

N-CHANNEL 30 V, 6.5 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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PSMN6R0-30YLB,115

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Nexperia USA Inc.

N-CHANNEL 30 V, 6.5 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN6R0 Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R0-30YLB,115

Current - Continuous Drain (Id) (Tc)	71 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	1088 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	58 W
Rds On (Max)	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN6R0 Series

N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Power Dissipation (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	Gate Charge (Max)	Technology	Current - Continuous Drain (Id) (Tc)	FET Type	Input Capacitance (Ciss) (Max)	FET Feature
Nexperia USA Inc. PSMN6R0-30YLB,115	1.95 V	-55 °C	175 °C	6.5 mOhm	58 W	SC-100 SOT-669	10 V	4.5 V	Surface Mount	20 V	30 V	LFPAK56 Power-SO8	19 nC	MOSFET (Metal Oxide)	71 A	N-Channel	1088 pF
Nexperia USA Inc. PSMN6R0-30YLDX	2.2 V	-55 °C	175 °C	6 mOhm	47 W	SC-100 SOT-669	10 V	4.5 V	Surface Mount	20 V	30 V	LFPAK56 Power-SO8	13.7 nC 13.7 nC 13.7 nC	MOSFET (Metal Oxide)	66 A	N-Channel	832 pF
Nexperia USA Inc. PSMN6R0-25YLB,115	1.95 V	-55 °C	175 °C	6.1 mOhm	58 W	SC-100 SOT-669	10 V	4.5 V	Surface Mount	20 V	25 V	LFPAK56 Power-SO8	19.3 nC	MOSFET (Metal Oxide)	73 A	N-Channel	1099 pF
Nexperia USA Inc. PSMN6R0-25YLDX	2.2 V	-55 °C	175 °C	6.75 mOhm	43 W	SC-100 SOT-669	10 V	4.5 V	Surface Mount	20 V	25 V	LFPAK56 Power-SO8	10.5 nC	MOSFET (Metal Oxide)	61 A	N-Channel	705 pF 705 pF	Schottky Diode (Body)
Nexperia USA Inc. PSMN6R0-30YL,115	2.15 V	-55 °C	175 °C	6 mOhm	55 W	SC-100 SOT-669	10 V	4.5 V	Surface Mount	20 V	30 V	LFPAK56 Power-SO8	24 nC 24 nC	MOSFET (Metal Oxide)	79 A	N-Channel	1425 pF