CSD16327Q3
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 4.8 MOHM
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CSD16327Q3
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 4.8 MOHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD16327Q3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3 V, 8 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V, -8 V |
| Vgs(th) (Max) @ Id | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.08 | |
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.48 | |||
| Digi-Reel® | 1 | $ 1.08 | ||
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.48 | |||
| Tape & Reel (TR) | 2500 | $ 0.41 | ||
| Texas Instruments | LARGE T&R | 1 | $ 0.79 | |
| 100 | $ 0.61 | |||
| 250 | $ 0.45 | |||
| 1000 | $ 0.32 | |||
CSD16327 Series
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm
| Part | Vgs (Max) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16327Q3 | -8 V, 10 V | 8-PowerTDFN | 150 °C | -55 °C | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 3 W | 1300 pF | 25 V | 60 A | MOSFET (Metal Oxide) | 3 V, 8 V | 4 mOhm | N-Channel | 1.4 V |
Description
General part information
CSD16327 Series
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Documents
Technical documentation and resources