BCP5310E6327HTSA1

Obsolete

Infineon Technologies

TRANS PNP 80V 1A SOT223-4

Search across all available documentation for this part.

Obsolete

Infineon Technologies

TRANS PNP 80V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5310E6327HTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Infineon Technologies BCP5316E6433HTMA1	500 mV	PNP	Surface Mount	125 MHz	1 A	100 nA	150 °C	2 W	100	PG-SOT223-4	80 V	TO-261-4 TO-261AA
Infineon Technologies BCP5310E6327HTSA1	500 mV	PNP	Surface Mount	125 MHz	1 A	100 nA	150 °C	2 W	63 hFE	PG-SOT223-4-10	80 V	TO-261-4 TO-261AA
Infineon Technologies BCP5316H6327XTSA1	500 mV	PNP	Surface Mount	125 MHz	1 A	100 nA	150 °C	2 W	100	PG-SOT223-4-24	80 V	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

Technical documentation and resources